PART |
Description |
Maker |
LTE-2871 |
GaAlAs T-1 3/4 Modified Infrared Emitting Diode
|
LITE-ON ELECTRONICS INC 光宝科技股份有限公司 Lite-On Technology Corporation
|
126254H |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
126264 |
GaAlAs / GaAlAs LED Chips (substrate removed)
|
OSA Opto Light GmbH
|
136274 |
GaAlAs / GaAlAs Chips (substrate removed)
|
OSA Opto Light GmbH
|
Q62702-P5053 SFH4860 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
SFH7221 SFH7221-Z |
GaAlAs-IR-Lumineszenzdiode (880 nm) und Si-Fototransistor GaAlAs-Infrared-Emitter (880 nm) and Si-Phototransistor
|
OSA Opto Light GmbH OSRAM GmbH
|
TSAL4400 |
GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package 砷化红外发光二极管的GaAIAs呢?3毫米(T.1)包 GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package From old datasheet system GaAs/GaAlAs IR Emitting Diode in ? 3 mm (T?1)Package GaAs/GaAlAs IR Emitting Diode in 3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in 庐3 mm (T.1) Package GaAs/GaAlAs IR Emitting Diode in ?3 mm (T.1) Package
|
Vishay Intertechnology, Inc. VISAY[Vishay Siliconix] Vishay Telefunken
|
SFH464E7800 SFH464 Q62702-Q1745 |
GaAlAs-Lumineszenzdiode 660 nm GaAlAs Light Emitting Diode 660 nm 发动器,Lumineszenzdiode 660纳米发光二极管的GaAIAs 660纳米 From old datasheet system
|
SIEMENS AG SIEMENS[Siemens Semiconductor Group]
|
L53F3BT |
T-1 3/4 (5 MM) INFRA RED EMITTING DIODE
|
List of Unclassifed Manufacturers ETC[ETC]
|
L-34F3C |
INFRA-RED EMITTIMG DIODES
|
Kingbright Electronic Kingbright Corporation
|